IKQ50N120CH3 Datasheet and Replacement
Type Designator: IKQ50N120CH3
Type: IGBT + Anti-Parallel Diode
Marking Code: K50MCH3
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 652 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 355 pF
Qgⓘ - Total Gate Charge, typ: 235 nC
Package: TO247
- IGBT Cross-Reference
IKQ50N120CH3 Datasheet (PDF)
ikq50n120ch3.pdf

IKQ50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel
ikq50n120ct2.pdf

IKQ50N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXGP16N60C2 | HGTG20N120E2
Keywords - IKQ50N120CH3 transistor datasheet
IKQ50N120CH3 cross reference
IKQ50N120CH3 equivalent finder
IKQ50N120CH3 lookup
IKQ50N120CH3 substitution
IKQ50N120CH3 replacement
History: IXGP16N60C2 | HGTG20N120E2



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