All IGBT. IKQ50N120CH3 Datasheet

 

IKQ50N120CH3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKQ50N120CH3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K50MCH3
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 652 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 355 pF
   Qgⓘ - Total Gate Charge, typ: 235 nC
   Package: TO247

 IKQ50N120CH3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKQ50N120CH3 Datasheet (PDF)

 ..1. Size:1627K  infineon
ikq50n120ch3.pdf

IKQ50N120CH3
IKQ50N120CH3

IKQ50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel

 4.1. Size:1638K  infineon
ikq50n120ct2.pdf

IKQ50N120CH3
IKQ50N120CH3

IKQ50N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap

Datasheet: IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , FGH40N60UFD , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP .

 

 
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