IKQ50N120CH3 Datasheet. Specs and Replacement

Type Designator: IKQ50N120CH3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 652 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 355 pF

Package: TO247

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IKQ50N120CH3 datasheet

 ..1. Size:1627K  infineon
 ikq50n120ch3.pdf pdf_icon

IKQ50N120CH3

IKQ50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode C Features High speed H3 technology offers High efficiency in hard switching and resonant topologies 10 sec short circuit withstand time at T =175 C vj Easy parallel... See More ⇒

 4.1. Size:1638K  infineon
 ikq50n120ct2.pdf pdf_icon

IKQ50N120CH3

IKQ50N120CT2 TRENCHSTOPTM 2 low V second generation IGBT ce(sat) Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features TRENCHSTOP 2 technology offers Very low V , 1.75V at nominal current CE(sat) 10 sec short circuit withstand time at T =175 C vj Easy paralleling cap... See More ⇒

Specs: IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2, MBQ60T65PES, IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP

Keywords - IKQ50N120CH3 transistor spec

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