All IGBT. IKY75N120CS6 Datasheet

 

IKY75N120CS6 Datasheet and Replacement


   Type Designator: IKY75N120CS6
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75MCS6
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 360 pF
   Qgⓘ - Total Gate Charge, typ: 530 nC
   Package: TO247-4
      - IGBT Cross-Reference

 

IKY75N120CS6 Datasheet (PDF)

 ..1. Size:2024K  infineon
iky75n120cs6.pdf pdf_icon

IKY75N120CS6

IKY75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie

 4.1. Size:1577K  infineon
iky75n120ch3.pdf pdf_icon

IKY75N120CS6

IKY75N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - IKY75N120CS6 transistor datasheet

 IKY75N120CS6 cross reference
 IKY75N120CS6 equivalent finder
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