All IGBT. IKY75N120CS6 Datasheet

 

IKY75N120CS6 Datasheet and Replacement


   Type Designator: IKY75N120CS6
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75MCS6
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 360 pF
   Qg ⓘ - Total Gate Charge, typ: 530 nC
   Package: TO247-4
 

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IKY75N120CS6 Datasheet (PDF)

 ..1. Size:2024K  infineon
 iky75n120cs6.pdf pdf_icon

IKY75N120CS6

IKY75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie

 4.1. Size:1577K  infineon
 iky75n120ch3.pdf pdf_icon

IKY75N120CS6

IKY75N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in

Datasheet: IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 , IKY75N120CH3 , GT30G124 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF .

History: HMG40N65T | KGT25N135KDH | NCE100ED65BT | IGW30N65L5 | CM150TX-24S1 | STGB20NB41LZ | HGTP7N60B3

Keywords - IKY75N120CS6 transistor datasheet

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