IKY75N120CS6 IGBT. Datasheet pdf. Equivalent
Type Designator: IKY75N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K75MCS6
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 880
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 32
Collector Capacity (Cc), typ, pF: 360
Total Gate Charge (Qg), typ, nC: 530
Package: TO247-4
IKY75N120CS6 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKY75N120CS6 Datasheet (PDF)
iky75n120cs6.pdf
IKY75N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoefficie
iky75n120ch3.pdf
IKY75N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeFeatures:High speed H3 technology offers: Ultra-low loss switching losses thanks to Kelvin emitter pinpackage in combination with High speed H3 technology High efficiency in
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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