IKZ75N65ES5 Datasheet and Replacement
Type Designator: IKZ75N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EES5
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Qg ⓘ - Total Gate Charge, typ: 164 nC
Package: TO247-4
IKZ75N65ES5 substitution
IKZ75N65ES5 Datasheet (PDF)
ikz75n65es5.pdf

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ikz75n65el5.pdf

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Datasheet: IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKW75N60T , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF .
History: MMG25H120X6TN
Keywords - IKZ75N65ES5 transistor datasheet
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History: MMG25H120X6TN



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