IKZ75N65ES5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKZ75N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EES5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 395
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.42
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 25
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 164
Package: TO247-4
IKZ75N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKZ75N65ES5 Datasheet (PDF)
ikz75n65es5.pdf
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IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ75N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ75N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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