IRG4PC30FPBF Datasheet. Specs and Replacement

Type Designator: IRG4PC30FPBF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 31 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 74 pF

Package: TO247

 IRG4PC30FPBF Substitution

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IRG4PC30FPBF datasheet

 ..1. Size:269K  international rectifier
irg4pc30fpbf.pdf pdf_icon

IRG4PC30FPBF

PD -94920 IRG4PC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 17A E Industry stan... See More ⇒

 5.1. Size:150K  international rectifier
irg4pc30f.pdf pdf_icon

IRG4PC30FPBF

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE ... See More ⇒

 5.2. Size:216K  international rectifier
irg4pc30fd.pdf pdf_icon

IRG4PC30FPBF

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and high... See More ⇒

 6.1. Size:184K  international rectifier
irg4pc30kd.pdf pdf_icon

IRG4PC30FPBF

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switchin... See More ⇒

Specs: IKY75N120CS6, IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF, IRG4IBC10UDPBF, G50T65D, IRG4PC30UDPBF, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF, IRG4PC50UPBF, IRG4PF50WPBF, IRG4PH30KPBF

Keywords - IRG4PC30FPBF transistor spec

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