IRG4PC50UPBF Datasheet. Specs and Replacement
Type Designator: IRG4PC50UPBF 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO247
IRG4PC50UPBF Substitution - IGBTⓘ Cross-Reference Search
IRG4PC50UPBF datasheet
irg4pc50upbf.pdf
PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industr... See More ⇒
irg4pc50u.pdf
D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3... See More ⇒
irg4pc50ud.pdf
PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒
irg4pc50udpbf.pdf
PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V parameter distribution and higher efficiency than G Generation... See More ⇒
Specs: IRG4BC20UDPBF, IRG4IBC10UDPBF, IRG4PC30FPBF, IRG4PC30UDPBF, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF, RJH3047, IRG4PF50WPBF, IRG4PH30KPBF, IRG4PH40KDPBF, IRG4PH50KDPBF, IRG4PH50UDPBF, IRG4PSC71KDPBF, IRG7PH35UDPBF, IRG7PH35UD-EP
Keywords - IRG4PC50UPBF transistor spec
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History: CRG75T60AK3HD
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