All IGBT. IRG4PF50WPBF Datasheet

 

IRG4PF50WPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PF50WPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 51 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.25 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247

 IRG4PF50WPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PF50WPBF Datasheet (PDF)

 ..1. Size:648K  infineon
irg4pf50wpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 95230IRG4PF50WPbF Lead-Freewww.irf.com 104/30/04IRG4PF50WPbF2 www.irf.comIRG4PF50WPbFwww.irf.com 3IRG4PF50WPbF4 www.irf.comIRG4PF50WPbFwww.irf.com 5IRG4PF50WPbF6 www.irf.comIRG4PF50WPbFwww.irf.com 7IRG4PF50WPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30

 5.1. Size:253K  international rectifier
irg4pf50wd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91788IRG4PF50WDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Optimized for use in Welding and Switch-ModeVCES = 900VPower Supply applications Industry benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.25VG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, I

 5.2. Size:132K  international rectifier
irg4pf50w.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91710IRG4PF50WINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for use in Welding and Switch-ModeVCES = 900VPower Supply applications Industry benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.25VG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 28AE Latest technology IGB

 9.1. Size:150K  international rectifier
irg4pc30f.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE

 9.2. Size:339K  international rectifier
irg4ph40ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat

 9.3. Size:153K  international rectifier
irg4pc50u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3

 9.4. Size:693K  international rectifier
irg4pc20u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 97289IRG4PC20UPbFUltraFast Speed IGBTPROVISIONALINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.85VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 6.5AE Generatio

 9.5. Size:184K  international rectifier
irg4pc30kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91587AIRG4PC30KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.21V Combines low conduction losses with highG switchin

 9.6. Size:231K  international rectifier
irg4pc60upbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

 9.7. Size:126K  international rectifier
irg4ph50s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 9.8. Size:219K  international rectifier
irg4pc50ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an

 9.9. Size:224K  international rectifier
irg4pc40fd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91464BIRG4PC40FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighterG parameter distribution and high

 9.10. Size:198K  international rectifier
irg4psh71kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91688AIRG4PSH71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 1200Vwith TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized forVCE(on) typ. = 2.97VmotorcontrolG Minimum switching losses com

 9.11. Size:408K  international rectifier
auirg4pc40s-e.pdf

IRG4PF50WPBF
IRG4PF50WPBF

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 9.12. Size:141K  international rectifier
irg4psc71u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct

 9.13. Size:220K  international rectifier
irg4ph50s-e.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 9.14. Size:219K  international rectifier
irg4ph40kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91577BIRG4PH40KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.74V Combines low conduction losses with highG switching speed

 9.15. Size:227K  international rectifier
irg4ph50kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91575BIRG4PH50KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.77V Combines low conduction losses with highG switching speed

 9.16. Size:214K  international rectifier
irg4pc50fd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

 9.17. Size:221K  international rectifier
irg4pc60f.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

 9.18. Size:125K  international rectifier
irg4pc40k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D . IRG4PC40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Ge

 9.19. Size:216K  international rectifier
irg4pc30fd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91460BIRG4PC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and high

 9.20. Size:295K  international rectifier
auirg4ph50s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 9.21. Size:215K  international rectifier
irg4ph30kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91579AIRG4PH30KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 3.10V Combines low conduction losses with highG switching speed

 9.22. Size:148K  international rectifier
irg4pc40s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

 9.23. Size:125K  international rectifier
irg4pc30s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC30S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

 9.24. Size:31K  international rectifier
irg4pc50kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91582BIRG4PC50KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600Voperating frequencies >5.0 kHz, and Short Circuit Ratedto 10s @125C, VGE = 15VVCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameterGdistribution and higher

 9.25. Size:118K  international rectifier
irg4pc60f-p.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

 9.26. Size:326K  international rectifier
irg4psh71ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91686IRG4PSH71UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Copack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHzVCES = 1200V in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.52VG parameter distribution and higher effi

 9.27. Size:167K  international rectifier
irg4pc50s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC50S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

 9.28. Size:188K  international rectifier
irg4pc40kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91584AIRG4PC40KD Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design pro

 9.29. Size:121K  international rectifier
irg4pc50k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91583BIRG4PC50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 1.84VG switching speed Latest generation design

 9.30. Size:152K  international rectifier
irg4pc50f.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

 9.31. Size:248K  international rectifier
irg4psc71ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov

 9.32. Size:136K  international rectifier
irg4psh71k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91687AIRG4PSH71KPRELIMINARYShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 1200V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 42A

 9.33. Size:280K  international rectifier
irg4psc71k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction

 9.34. Size:126K  international rectifier
irg4pc60u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

 9.35. Size:150K  international rectifier
irg4pc40f.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VGE

 9.36. Size:271K  international rectifier
irg4psh71u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91685IRG4PSH71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.50VG parameter distribution and higher efficiency (minimum switching and conduct

 9.37. Size:151K  international rectifier
irg4pc30u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.95VG parameter distribution and higher efficiency than Generation 3

 9.38. Size:153K  international rectifier
irg4pc40u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation 3

 9.39. Size:119K  international rectifier
irg4pc40w.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91656CIRG4PC40WINSULATED GATE BIPOLAR TRANSISTORFeatures C Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 20AE Low IGBT conduction losses

 9.40. Size:144K  international rectifier
irg4pc50s-p.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC50S-PStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

 9.41. Size:238K  international rectifier
irg4pc40ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 9.1467DIRG4PC40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.72V Generation 4 IGBT design provides tighterG parameter distribution a

 9.42. Size:166K  international rectifier
irg4ph40u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.43VG parameter distribution and higher efficiency than previous gene

 9.43. Size:129K  international rectifier
irg4p254s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4P254SI T D T I T I T Standard Speed IGBTFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 250V voltage and operating frequencies up to 10kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.32VG Generation 3 Industry stand

 9.44. Size:127K  international rectifier
irg4ph40s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91808IRG4PH40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low on state voltage drop 1.0V typical atVCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC packageVCE(on) typ. = 1.46VG@VGE = 15V, IC = 20AEN-channelBenefits High current density systems Optimized for specific app

 9.45. Size:229K  international rectifier
irg4ph50ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

 9.46. Size:160K  international rectifier
irg4ph40k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PH40KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74VG switching speed Latest generation design provi

 9.47. Size:122K  international rectifier
irg4pc60u-p.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

 9.48. Size:137K  international rectifier
irg4ph50u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

 9.49. Size:68K  international rectifier
irg4ph50k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 9.1576IRG4PH50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200Vtsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77Vswitching speedG Latest generation design provides tighter@VGE = 15V, IC = 24AEparameter distr

 9.50. Size:299K  international rectifier
irg4ph40ud2-e.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 96781AIRG4PH40UD2-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast IGBT optimized for high operatingVCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafastVCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use inG resonant circuits Indus

 9.51. Size:127K  international rectifier
irg4pc30k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC30KShort Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.21VG switching speed Latest generation design

 9.52. Size:121K  international rectifier
irg4pc30w.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC30WI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.70VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC

 9.53. Size:216K  international rectifier
irg4pc30ud.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD 91462BIRG4PC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution an

 9.54. Size:323K  international rectifier
irg4pc50f-e.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

 9.55. Size:152K  international rectifier
irg4ph20k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -91776IRG4PH20KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.17VG switching speed Latest generation design provides tighter parameter@VGE = 15V, IC = 5

 9.56. Size:164K  international rectifier
irg4ph30k.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PH30KShort Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 3.10VG switching speed Latest generation design provi

 9.57. Size:191K  international rectifier
irg4psc71kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb

 9.58. Size:159K  international rectifier
irg4pc50w.pdf

IRG4PF50WPBF
IRG4PF50WPBF

D IRG4PC50WI T D T I T I T CFeaturesFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) max. = 2.30VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

 9.59. Size:193K  international rectifier
irg4ph20kd.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 91777IRG4PH20KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 3.17V Combines low conduction losses with highG switching speed@VGE = 15V, IC = 5.0A Tighter para

 9.60. Size:1836K  infineon
irg4pc50sdpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

 9.61. Size:342K  infineon
irg4pc40fdpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 94911AIRG4PC40FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50V parameter distribution and higher efficiency thanG Generation 3

 9.62. Size:398K  infineon
auirg4pc40s-e.pdf

IRG4PF50WPBF
IRG4PF50WPBF

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 9.63. Size:349K  infineon
irg4ph30kpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 95401IRG4PH30KPbF Lead-Freewww.irf.com 16/17/04IRG4PH30KPbF2 www.irf.comIRG4PH30KPbFwww.irf.com 3IRG4PH30KPbF4 www.irf.comIRG4PH30KPbFwww.irf.com 5IRG4PH30KPbF6 www.irf.comIRG4PH30KPbFwww.irf.com 7IRG4PH30KPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30

 9.64. Size:280K  infineon
auirg4ph50s.pdf

IRG4PF50WPBF
IRG4PF50WPBF

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 9.65. Size:676K  infineon
irg4ph50kdpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 95189IRG4PH50KDPbFShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeatures C High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77VG switching speed Tighter parameter distribution a

 9.66. Size:751K  infineon
irg4ph40kdpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 95402IRG4PH40KDPbF Lead-Freewww.irf.com 16/17/04IRG4PH40KDPbF2 www.irf.comIRG4PH40KDPbFwww.irf.com 3IRG4PH40KDPbF4 www.irf.comIRG4PH40KDPbFwww.irf.com 5IRG4PH40KDPbF6 www.irf.comIRG4PH40KDPbFwww.irf.com 7IRG4PH40KDPbF8 www.irf.comIRG4PH40KDPbFwww.irf.com 9IRG4PH40KDPbFTO-247AC Package OutlineDimensions are shown in millimeters (inch

 9.67. Size:681K  infineon
irg4ph50udpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous gener

 9.68. Size:269K  infineon
irg4pc30fpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -94920IRG4PC30FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 17AE Industry stan

 9.69. Size:635K  infineon
irg4pc50upbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr

 9.70. Size:137K  infineon
irg4ph50u.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

 9.71. Size:446K  infineon
irg4psc71kdpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD- 95901IRG4PSC71KDPbF Lead-Freewww.irf.com 109/15/04IRG4PSC71KDPbF2 www.irf.comIRG4PSC71KDPbFwww.irf.com 3IRG4PSC71KDPbF4 www.irf.comIRG4PSC71KDPbFwww.irf.com 5IRG4PSC71KDPbF6 www.irf.comIRG4PSC71KDPbFwww.irf.com 7IRG4PSC71KDPbF8 www.irf.comIRG4PSC71KDPbFwww.irf.com 9IRG4PSC71KDPbFCase Outline and Dimensions Super-247Super-247 (TO-

 9.72. Size:385K  infineon
irg4pc30udpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 95327IRG4PC30UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHzin resonant modeVCE(on) typ. = 1.95V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation

 9.73. Size:310K  infineon
irg4pc50fpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

 9.74. Size:687K  infineon
irg4pc50udpbf.pdf

IRG4PF50WPBF
IRG4PF50WPBF

PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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