IXGH25N120 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGH25N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Qgⓘ - Total Gate Charge, typ: 130 nC
Package: TO247
IXGH25N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGH25N120 Datasheet (PDF)
ixgh25n120.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 VHigh speed IGBT IXGH 25 N120A 1200 V 50 A 4 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AG = Gate, C = Collector,IC90 TC = 90C25 AE = Emitter, TAB = CollectorI
ixgh25n100u1.pdf
Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI
ixgh25n160 ixgt25n160.pdf
VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110
ixgh25n100au1.pdf
Preliminary data VCES IC25 VCE(sat)Low VCE(sat)High speed IGBTIXGH25N100U1 1000 V 50 A 3.5 VIXGH25N100AU1 1000 V 50 A 4.0 Vwith DiodeTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VGCEVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30 VE = Emitter TAB = CollectorI
ixgh25n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
ixgh25n100.pdf
VCES IC25 VCE(sat)Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 VHigh speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C50 AIC90 TC = 90C25 A TO-204 AE (IXGM)ICM TC = 25C, 1 m
ixgh25n160.pdf
VCES = 1600 VIXGH 25N160High Voltage IGBTIC25 = 75 AIXGT 25N160VCE(sat)= 2.5 VFor Capacitor DischargeApplicationsPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TJ = 25C to 150C 1600 VVCGR TJ = 25C to 150C; RGE = 1 M 1600 VVGES Continuous 20 VGC C (TAB)VGEM Transient 30 VEIC25 TC = 25C 75 ATO-268 (IXGT)IC110
Datasheet: IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IRG7R313U , IXGH28N30 , IXGH28N30A , IXGH28N30B , IXGH28N60B , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S .
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