All IGBT. IXGH25N120 Datasheet

 

IXGH25N120 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH25N120

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Maximum Collector Current |Ic|, A: 50A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 3.5

Package: TO247

IXGH25N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH25N120 Datasheet (PDF)

1.1. ixgh25n120.pdf Size:34K _igbt

IXGH25N120
IXGH25N120

VCES IC25 VCE(sat) Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 V High speed IGBT IXGH 25 N120A 1200 V 50 A 4 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A G = Gate, C = Collector, IC90 TC = 90°C25 A E = Emitter, TAB = Collector I

2.1. ixgh25n160 ixgt25n160.pdf Size:142K _ixys

IXGH25N120
IXGH25N120

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 1600 V VCGR TJ = 25C to 150C; RGE = 1 M? 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25C 75 A TO-268 (IXGT) IC110 TC = 110C

2.2. ixgh25n100au1.pdf Size:227K _igbt

IXGH25N120
IXGH25N120

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V G C E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter TAB = Collector I

2.3. ixgh25n100u1.pdf Size:227K _igbt

IXGH25N120
IXGH25N120

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V G C E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter TAB = Collector I

2.4. ixgh25n160.pdf Size:138K _igbt

IXGH25N120
IXGH25N120

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1600 V VGES Continuous ± 20 V G C C (TAB) VGEM Transient ± 30 V E IC25 TC = 25°C 75 A TO-268 (IXGT) IC110

2.5. ixgh25n100a.pdf Size:76K _igbt

IXGH25N120
IXGH25N120

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A IC90 TC = 90°C25 A TO-204 AE (IXGM) ICM TC = 25°C, 1 m

2.6. ixgh25n100.pdf Size:76K _igbt

IXGH25N120
IXGH25N120

VCES IC25 VCE(sat) Low VCE(sat) IXGH/IXGM 25 N100 1000 V 50 A 3.5 V High speed IGBT IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C50 A IC90 TC = 90°C25 A TO-204 AE (IXGM) ICM TC = 25°C, 1 m

Datasheet: IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , G30N60C3 , IXGH28N30 , IXGH28N30A , IXGH28N30B , IXGH28N60B , IXGH28N60D1 , IXGH28N90B , IXGH30N30 , IXGH30N30S .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |