IXGH25N120 Specs and Replacement
Type Designator: IXGH25N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3(max) V @25℃
tr ⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO247
IXGH25N120 Substitution - IGBT ⓘ Cross-Reference Search
IXGH25N120 datasheet
ixgh25n120.pdf
VCES IC25 VCE(sat) Low VCE(sat) IXGH 25 N120 1200 V 50 A 3 V High speed IGBT IXGH 25 N120A 1200 V 50 A 4 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gate, C = Collector, IC90 TC = 90 C25 A E = Emitter, TAB = Collector I... See More ⇒
ixgh25n100u1.pdf
Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I... See More ⇒
ixgh25n160 ixgt25n160.pdf
VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110... See More ⇒
ixgh25n100au1.pdf
Preliminary data VCES IC25 VCE(sat) Low VCE(sat) High speed IGBT IXGH25N100U1 1000 V 50 A 3.5 V IXGH25N100AU1 1000 V 50 A 4.0 V with Diode TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V G C E VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter TAB = Collector I... See More ⇒
Specs: IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , GT30G124 , IXGH28N30 , IXGH28N30A , IXGH28N30B , IXGH28N60B , IXGH32N60AS , IXGH28N90B , IXGH30N30 , IXGH30N30S .
Keywords - IXGH25N120 transistor spec
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IXGH25N120 equivalent finder
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