IRGP4620DPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP4620DPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 32 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 52 pF
Qgⓘ - Total Gate Charge, typ: 25 nC
Package: TO247
IRGP4620DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4620DPBF Datasheet (PDF)
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf
IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
irgp4620d.pdf
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp
irgp4650d.pdf
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
irgp460lc.pdf
PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irgp4660d.pdf
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
irgp4640d.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
irgp4630d.pdf
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl
irgp4690d.pdf
IRGP4690DPbFIRGP4690D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 90A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGVCE(on) typ. = 1.70V @ IC = 75A GETO-247AC TO-247ADn-channelIRGP4690DPbF IRGP4690D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldin
irgp4640.pdf
IRGP4640PbFIRGP4640-EPbFINSULATED GATE BIPOLAR TRANSISTORVCES = 600VCCCIC = 40A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGE GVCE(on) typ. = 1.60V @ IC = 24An-channelTO-247AC TO-247ADIRGP4640PbF IRGP4640-EPGC EApplications Gate Collector Emitter Inverters UPS WeldingFeatures BenefitsHigh efficiency in a wide range of applications
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf
IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
irgp4650dpbf.pdf
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
irgp4660dpbf.pdf
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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