IRGP4630DPBF PDF and Equivalents Search

 

IRGP4630DPBF Specs and Replacement

Type Designator: IRGP4630DPBF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 206 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 47 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 87 pF

Package: TO247

 IRGP4630DPBF Substitution

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IRGP4630DPBF datasheet

 ..1. Size:1323K  infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf pdf_icon

IRGP4630DPBF

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust... See More ⇒

 5.1. Size:1268K  international rectifier
irgp4630d.pdf pdf_icon

IRGP4630DPBF

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100 C E E E G E C tSC 5 s, TJ(max) = 175 C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl... See More ⇒

 8.1. Size:347K  international rectifier
irgp4650d.pdf pdf_icon

IRGP4630DPBF

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 35A E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Weldi... See More ⇒

 8.2. Size:154K  international rectifier
irgp460lc.pdf pdf_icon

IRGP4630DPBF

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒

Specs: IRG7PH42UDPBF, IRGB4056DPBF, IRGB4620DPBF, IRGIB4620DPBF, IRGP4620DPBF, IRGS4620DPBF, IRGB4630DPBF, IRGIB4630DPBF, IRGP4066D, IRGS4630DPBF, IRGB4B60KD1PBF, IRGS4B60KD1PBF, IRGSL4B60KD1PBF, IRGIB10B60KD1P, IRGIB15B60KD1P, IRGP20B60PDPBF, IRGP35B60PDPBF

Keywords - IRGP4630DPBF transistor spec

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