All IGBT. IRGIB10B60KD1P Datasheet

 

IRGIB10B60KD1P Datasheet and Replacement


   Type Designator: IRGIB10B60KD1P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 44 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 66 pF
   Qg ⓘ - Total Gate Charge, typ: 41 nC
   Package: TO220F
 

 IRGIB10B60KD1P substitution

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IRGIB10B60KD1P Datasheet (PDF)

 ..1. Size:392K  international rectifier
 irgib10b60kd1p.pdf pdf_icon

IRGIB10B60KD1P

IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E

 1.1. Size:384K  international rectifier
 irgib10b60kd1.pdf pdf_icon

IRGIB10B60KD1P

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

 8.1. Size:282K  international rectifier
 irgib15b60kd1.pdf pdf_icon

IRGIB10B60KD1P

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 8.2. Size:382K  international rectifier
 irgib15b60kd1p.pdf pdf_icon

IRGIB10B60KD1P

PD- 94914IRGIB15B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

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Datasheet: IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF , IRGS4630DPBF , IRGB4B60KD1PBF , IRGS4B60KD1PBF , IRGSL4B60KD1PBF , YGW40N65F1 , IRGIB15B60KD1P , IRGP20B60PDPBF , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF .

History: STGWT80H65DFB | IRGP50B60PD1PBF

Keywords - IRGIB10B60KD1P transistor datasheet

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