All IGBT. IRGIB10B60KD1P Datasheet

 

IRGIB10B60KD1P IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGIB10B60KD1P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 44
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 16
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 24
   Collector Capacity (Cc), typ, pF: 66
   Total Gate Charge (Qg), typ, nC: 41
   Package: TO220F

 IRGIB10B60KD1P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGIB10B60KD1P Datasheet (PDF)

 ..1. Size:392K  infineon
 irgib10b60kd1p.pdf

IRGIB10B60KD1P IRGIB10B60KD1P

IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E

 1.1. Size:384K  international rectifier
 irgib10b60kd1.pdf

IRGIB10B60KD1P IRGIB10B60KD1P

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

 8.1. Size:282K  international rectifier
 irgib15b60kd1.pdf

IRGIB10B60KD1P IRGIB10B60KD1P

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 8.2. Size:382K  infineon
 irgib15b60kd1p.pdf

IRGIB10B60KD1P IRGIB10B60KD1P

PD- 94914IRGIB15B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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