All IGBT. IRGP4062D-EPBF Datasheet

 

IRGP4062D-EPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4062D-EPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 250
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 48
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 22
   Collector Capacity (Cc), typ, pF: 129
   Total Gate Charge (Qg), typ, nC: 50
   Package: TO247

 IRGP4062D-EPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4062D-EPBF Datasheet (PDF)

 ..1. Size:415K  infineon
 irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf

IRGP4062D-EPBF IRGP4062D-EPBF

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

 3.1. Size:434K  international rectifier
 irgp4062d-e.pdf

IRGP4062D-EPBF IRGP4062D-EPBF

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

 3.2. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

IRGP4062D-EPBF IRGP4062D-EPBF

PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 3.3. Size:554K  infineon
 auirgp4062d auirgp4062d-e.pdf

IRGP4062D-EPBF IRGP4062D-EPBF

AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel

Datasheet: IRGS4B60KD1PBF , IRGSL4B60KD1PBF , IRGIB10B60KD1P , IRGIB15B60KD1P , IRGP20B60PDPBF , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , JT075N065WED , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF , IRGP4068DPBF , IRGP4068D-EPBF , IRGP4069DPBF , IRGP4650DPBF .

History: STGWA30IH65DF

 

 
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