IRGP4650DPBF IGBT. Datasheet pdf. Equivalent

   Type Designator: IRGP4650DPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 76 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Qgⓘ - Total Gate Charge, typ: 69 nC
   Package: TO247

IRGP4650DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4650DPBF Datasheet (PDF)

..1. Size:333K infineon
irgp4650dpbf.pdf

IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi

5.1. Size:347K international rectifier
irgp4650d.pdf

8.1. Size:154K international rectifier
irgp460lc.pdf

PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

8.2. Size:901K international rectifier
irgp4620d.pdf

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp

8.3. Size:363K international rectifier
irgp4660d.pdf

IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi

8.4. Size:809K international rectifier
irgp4640d.pdf

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

8.5. Size:1268K international rectifier
irgp4630d.pdf

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

8.6. Size:361K international rectifier
irgp4690d.pdf

IRGP4690DPbFIRGP4690D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 90A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGVCE(on) typ. = 1.70V @ IC = 75A GETO-247AC TO-247ADn-channelIRGP4690DPbF IRGP4690D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldin

8.7. Size:427K international rectifier
irgp4640.pdf

IRGP4640PbFIRGP4640-EPbFINSULATED GATE BIPOLAR TRANSISTORVCES = 600VCCCIC = 40A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGE GVCE(on) typ. = 1.60V @ IC = 24An-channelTO-247AC TO-247ADIRGP4640PbF IRGP4640-EPGC EApplications Gate Collector Emitter Inverters UPS WeldingFeatures BenefitsHigh efficiency in a wide range of applications

8.8. Size:966K infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust

8.9. Size:1323K infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust

8.10. Size:350K infineon
irgp4660dpbf.pdf