IRGP6690DPBF Datasheet. Specs and Replacement

Type Designator: IRGP6690DPBF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 483 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 270 pF

Package: TO247

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IRGP6690DPBF datasheet

 ..1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6690DPBF

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea... See More ⇒

 5.1. Size:649K  international rectifier
 irgp6690d.pdf pdf_icon

IRGP6690DPBF

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea... See More ⇒

 8.1. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6690DPBF

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat... See More ⇒

 8.2. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6690DPBF

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100 C E tSC 5 s, TJ(max) = 175 C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D EPbF n-channel TO 247AC TO 247AD Applications G C E Welding Gate Collector Emitter H Bridg... See More ⇒

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Specs: IRGP4066DPBF, IRGP4066D-EPBF, IRGP4068DPBF, IRGP4068D-EPBF, IRGP4069DPBF, IRGP4650DPBF, IRGP4660DPBF, IRGP50B60PD1PBF, TGAN20N135FD, IRGP6690D-EPBF, IRGPS46160DPBF, IRGS4640DPBF, IRGSL4640DPBF, IRGB4640DPBF, IRGP4640DPBF, IRGP4640D-EPBF, DGF15N60CTL

Keywords - IRGP6690DPBF transistor spec

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