DGW30N65CTH IGBT. Datasheet pdf. Equivalent
Type Designator: DGW30N65CTH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 187
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 67
Total Gate Charge (Qg), typ, nC: 150
Package: TO247
DGW30N65CTH Transistor Equivalent Substitute - IGBT Cross-Reference Search
DGW30N65CTH Datasheet (PDF)
dgw30n65cth.pdf

RoHS DGW30N65CTH COMPLIANT IGBT Discrete V 650 V CEI 30 A CV I = A 1.95 V CE(SAT) C 30 Applications High frequency switching application Medical applications Uninterruptible power supply Circuit Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rugg
dgw30n65ctl.pdf

RoHS DGW30N65CTL COMPLIANT IGBT Discrete V 650 V CEI 30 A CV I = A 1.80 V CE(SAT) C 30 Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Circuit Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rugge
dgw30n65bth.pdf

RoHS DGW30N65BTH COMPLIANT IGBT Discrete V 650 V CEI 30 A CV I = A 1.95 V CE(SAT) C 30 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rugg
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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