All IGBT. DGW40N120CTH Datasheet

 

DGW40N120CTH IGBT. Datasheet pdf. Equivalent

Type Designator: DGW40N120CTH

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 40

Total Gate Charge (Qg), typ, nC: 165

Package: TO247

DGW40N120CTH Transistor Equivalent Substitute - IGBT Cross-Reference Search

DGW40N120CTH IGBT. Datasheet pdf. Equivalent

Type Designator: DGW40N120CTH

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 40

Total Gate Charge (Qg), typ, nC: 165

Package: TO247

DGW40N120CTH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW40N120CTH Datasheet (PDF)

 ..1. Size:411K  cn yangzhou yangjie elec
dgw40n120cth.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 0.1. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

 3.1. Size:503K  cn yangzhou yangjie elec
dgw40n120ctl.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 8.1. Size:398K  cn yangzhou yangjie elec
dgw40n65bth.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 8.2. Size:285K  cn yangzhou yangjie elec
dgw40n65ctl.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N65CTL COMPLIANT IGBT Modules V 650 V CEI 40 A CV I = A 1.80 V CE(SAT) C 40 Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Motion/servo control Features High breakdown voltage to 650V for improved reliability Maximum junction temperature 175 Positive temp

 8.3. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf

DGW40N120CTH
DGW40N120CTH

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

Datasheet: DGW15N120CTL , DGW15N65CTL , DGW20N60CTL , DGW20N65CTL , DGW25N120CTL , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL , CRG60T60AN3H , DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 .

 

 
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