All IGBT. DGW40N65CTH Datasheet

 

DGW40N65CTH Datasheet and Replacement


   Type Designator: DGW40N65CTH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 306 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 64 nS
   Qgⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247
      - IGBT Cross-Reference

 

DGW40N65CTH Datasheet (PDF)

 ..1. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf pdf_icon

DGW40N65CTH

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 4.1. Size:285K  cn yangzhou yangjie elec
dgw40n65ctl.pdf pdf_icon

DGW40N65CTH

RoHS DGW40N65CTL COMPLIANT IGBT Modules V 650 V CEI 40 A CV I = A 1.80 V CE(SAT) C 40 Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Motion/servo control Features High breakdown voltage to 650V for improved reliability Maximum junction temperature 175 Positive temp

 6.1. Size:398K  cn yangzhou yangjie elec
dgw40n65bth.pdf pdf_icon

DGW40N65CTH

RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 8.1. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf pdf_icon

DGW40N65CTH

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

Datasheet: DGW25N120CTL , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL , DGW40N120CTH , DGW40N120CTH0 , DGW40N120CTL , DGW40N65BTH , FGH40N60UFD , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D .

History: IGC109T120T6RM | DIM1200FSM17-A | IGC50T120T6RL

Keywords - DGW40N65CTH transistor datasheet

 DGW40N65CTH cross reference
 DGW40N65CTH equivalent finder
 DGW40N65CTH lookup
 DGW40N65CTH substitution
 DGW40N65CTH replacement

 

 
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