All IGBT. DGW40N65CTL Datasheet

 

DGW40N65CTL IGBT. Datasheet pdf. Equivalent

Type Designator: DGW40N65CTL

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 68

Total Gate Charge (Qg), typ, nC: 200

Package: TO247

DGW40N65CTL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGW40N65CTL Datasheet (PDF)

 ..1. Size:285K  cn yangzhou yangjie elec
 dgw40n65ctl.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N65CTL COMPLIANT IGBT Modules V 650 V CEI 40 A CV I = A 1.80 V CE(SAT) C 40 Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Motion/servo control Features High breakdown voltage to 650V for improved reliability Maximum junction temperature 175 Positive temp

 4.1. Size:406K  cn yangzhou yangjie elec
 dgw40n65cth.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 6.1. Size:398K  cn yangzhou yangjie elec
 dgw40n65bth.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 8.1. Size:411K  cn yangzhou yangjie elec
 dgw40n120cth.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 8.2. Size:503K  cn yangzhou yangjie elec
 dgw40n120ctl.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 8.3. Size:391K  cn yangzhou yangjie elec
 dgw40n120cth0.pdf

DGW40N65CTL DGW40N65CTL

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , HCKZ75N65BH2 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top