TGAN30S135FD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

TGAN30S135FD Specs and Replacement

Type Designator: TGAN30S135FD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 366 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

Coesⓘ - Output Capacitance, typ: 57 pF

Package: TO3PN

TGAN30S135FD Substitution

- IGBT ⓘ Cross-Reference Search

TGAN30S135FD datasheet

..1. Size:928K trinnotech
tgan30s135fd.pdf pdf_icon

TGAN30S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwa... See More ⇒

6.1. Size:912K trinnotech
tgan30s160fd.pdf pdf_icon

TGAN30S160FD Reverse Conducting Field Stop Trench IGBT Features 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ov... See More ⇒

8.1. Size:931K trinnotech
tgan30n135fd1.pdf pdf_icon

TGAN30N135FD1 Field Stop Trench IGBT Features TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN30N135FD1 TO-3PN TGAN30N... See More ⇒

8.2. Size:1072K trinnotech
tgan30n120fd.pdf pdf_icon

TGAN30N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN30N120FD TO-3PN TGAN30N120FD RoHS Abso... See More ⇒

Specs: TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , RJP30H1DPD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS .

Keywords - TGAN30S135FD transistor spec

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Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

TGAN30S135FD PDF and Equivalents Search