All IGBT. TGAN40N120F2D Datasheet

 

TGAN40N120F2D Datasheet and Replacement


   Type Designator: TGAN40N120F2D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 320 nC
   Package: TO3PN
      - IGBT Cross-Reference

 

TGAN40N120F2D Datasheet (PDF)

 ..1. Size:921K  trinnotech
tgan40n120f2d.pdf pdf_icon

TGAN40N120F2D

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 0.1. Size:866K  trinnotech
tgan40n120f2dw.pdf pdf_icon

TGAN40N120F2D

TGAN40N120F2DWField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsWelder, UPS, Inverter, SolarDevice Package Marking RemarkTGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHSAbsolute Maximu

 3.1. Size:945K  trinnotech
tgan40n120fdr.pdf pdf_icon

TGAN40N120F2D

TGAN40N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N120FDR TO-3P

 6.1. Size:865K  trinnotech
tgan40n135fd.pdf pdf_icon

TGAN40N120F2D

TGAN40N135FD Field Stop Trench IGBTFeatures 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ovens Soft Switching Applicat

Datasheet: TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , IRG7IC28U , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD .

History: IGC36T120T8L | TGAN40N110FD | DIM1200ASM45-TS001

Keywords - TGAN40N120F2D transistor datasheet

 TGAN40N120F2D cross reference
 TGAN40N120F2D equivalent finder
 TGAN40N120F2D lookup
 TGAN40N120F2D substitution
 TGAN40N120F2D replacement

 

 
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