IXGH30N60BD1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGH30N60BD1 Specs and Replacement

Type Designator: IXGH30N60BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

IXGH30N60BD1 Substitution

- IGBT ⓘ Cross-Reference Search

IXGH30N60BD1 datasheet

..1. Size:112K ixys
ixgh30n60bd1.pdf pdf_icon

IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC90 TC = 90 C30 A ICM TC = 25 C, 1... See More ⇒

4.1. Size:576K ixys
ixgh30n60b2.pdf pdf_icon

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

4.2. Size:506K ixys
ixgh30n60b2d1.pdf pdf_icon

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

4.3. Size:138K ixys
ixgh30n60bu1.pdf pdf_icon

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V C (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A C (TAB) IC110 TC = 110 C30 A G ICM ... See More ⇒