HGTP12N60C3DR Specs and Replacement
Type Designator: HGTP12N60C3DR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: TO220
HGTP12N60C3DR Substitution - IGBTⓘ Cross-Reference Search
HGTP12N60C3DR datasheet
hgtp12n60c3d hgt1s12n60c3d.pdf
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The ... See More ⇒
hgtp12n60c3d hgt1s12n60c3ds.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: MSG75C65HHC0, MSG75T65HHC0, MSG80D60FLC, MSG80N350FH, MSG80N350FL, MSG80N350FQC, MSG80N350HLC0, MSG80N60FQC, FGPF4533, JNG15T60FS, JNG15N120AI, JNG15N120HS2, JNG15T120AI, JNG15T120FS, JNG15T120HFU1, JNG15T120HFU2, JNG15T120HS
Keywords - HGTP12N60C3DR transistor spec
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