HGTP12N60C3DR Datasheet and Replacement
Type Designator: HGTP12N60C3DR
Type: IGBT + Anti-Parallel Diode
Marking Code: 12N60CDR
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 24 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 37 nS
Qgⓘ - Total Gate Charge, typ: 50 nC
Package: TO220
- IGBT Cross-Reference
HGTP12N60C3DR Datasheet (PDF)
hgtp12n60c3d hgt1s12n60c3d.pdf

HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
hgtp12n60c3d hgt1s12n60c3ds.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: MSG75C65HHC0 , MSG75T65HHC0 , MSG80D60FLC , MSG80N350FH , MSG80N350FL , MSG80N350FQC , MSG80N350HLC0 , MSG80N60FQC , RJP6065DPM , JNG15T60FS , JNG15N120AI , JNG15N120HS2 , JNG15T120AI , JNG15T120FS , JNG15T120HFU1 , JNG15T120HFU2 , JNG15T120HS .
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