All IGBT. IXGH32N60AU1 Datasheet

 

IXGH32N60AU1 Datasheet and Replacement


   Type Designator: IXGH32N60AU1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH32N60AU1 Datasheet (PDF)

 ..1. Size:48K  ixys
ixgh32n60au1 ixgh32n60au1s.pdf pdf_icon

IXGH32N60AU1

IXGH 32N60AU1IXGH 32N60AU1SVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTwith Diode VCE(sat) = 2.9VCombi Packtfi = 125 nsTO-247 SMD(32N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)

 4.1. Size:48K  ixys
ixgh32n60a.pdf pdf_icon

IXGH32N60AU1

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120

 4.2. Size:48K  ixys
ixgh32n60as.pdf pdf_icon

IXGH32N60AU1

IXGH 32N60AIXGH 32N60ASVCES = 600 VIC25 = 60 AHiPerFASTTM IGBTVCE(sat) = 2.9 Vtfi = 125 nsTO-247 SMD(32N60AS)Symbol Test Conditions Maximum RatingsC (TAB)VCES TJ = 25C to 150C 600 V GEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 ADVGEM Transient 30 VIC25 TC = 25C60 AIC90 TC = 90C32 AC (TAB)GICM TC = 25C, 1 ms 120

 5.1. Size:81K  ixys
ixgh32n60c.pdf pdf_icon

IXGH32N60AU1

IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =

Datasheet: IXGH30N60B , IXGH30N60BD1 , IXGH30N60BU1 , IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IKW30N60H3 , IXGH32N60B , IXGH32N60BD1 , IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - IXGH32N60AU1 transistor datasheet

 IXGH32N60AU1 cross reference
 IXGH32N60AU1 equivalent finder
 IXGH32N60AU1 lookup
 IXGH32N60AU1 substitution
 IXGH32N60AU1 replacement

 

 
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