All IGBT. IXGH32N60BD1 Datasheet

 

IXGH32N60BD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH32N60BD1

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 80

Package: TO247

IXGH32N60BD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH32N60BD1 Datasheet (PDF)

1.1. ixgh32n60c.pdf Size:81K _igbt

IXGH32N60BD1
IXGH32N60BD1

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =

1.2. ixgh32n60a.pdf Size:125K _igbt

IXGH32N60BD1
IXGH32N60BD1

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.3. ixgh32n60bu1.pdf Size:137K _igbt

IXGH32N60BD1
IXGH32N60BD1

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C60 A E = Emitter, TAB = Collector IC90 TC = 90°C32 A IC

1.4. ixgh32n60cd1.pdf Size:160K _igbt

IXGH32N60BD1
IXGH32N60BD1

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D

1.5. ixgh32n60b.pdf Size:34K _igbt

IXGH32N60BD1
IXGH32N60BD1

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C60 A E IC90 TC = 90°C32 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 120 A E = Emitter, TAB = Col

1.6. ixgh32n60bd1.pdf Size:125K _igbt

IXGH32N60BD1
IXGH32N60BD1

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

Datasheet: IXGH30N60BU1 , IXGH31N60 , IXGH31N60D1 , IXGH32N50B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , SGP10N60A , IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 .

 


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