All IGBT. CRG15T60A03L Datasheet

 

CRG15T60A03L IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG15T60A03L
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 96 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO263

 CRG15T60A03L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG15T60A03L Datasheet (PDF)

 ..1. Size:1123K  wuxi china
 crg15t60a03l.pdf

CRG15T60A03L CRG15T60A03L

CRG15T60A03L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 96 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-263 Features FS Trench Technology, Positive temperature coefficient Low satur

 5.1. Size:1352K  wuxi china
 crg15t60a83l crg15t60a93l.pdf

CRG15T60A03L CRG15T60A03L

Silicon FS Trench IGBT CRG15T60A83L, CRG15T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.7 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VC

 5.2. Size:1253K  wuxi china
 crg15t60a94s crg15t60a84s.pdf

CRG15T60A03L CRG15T60A03L

Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

 8.1. Size:1087K  wuxi china
 crg15t120bk3sd.pdf

CRG15T60A03L CRG15T60A03L

Silicon FS Trench IGBT CRG15T120BK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 236 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 8.2. Size:484K  wuxi china
 crg15t120bnr3s.pdf

CRG15T60A03L CRG15T60A03L

Silicon FS Trench IGBT CRG15T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

Datasheet: JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , FGL60N100BNTD , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD , CRG40T60AK3H .

 

 
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