All IGBT. IXGH39N60B Datasheet

 

IXGH39N60B IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH39N60B

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 55

Package: TO247

IXGH39N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH39N60B Datasheet (PDF)

1.1. ixgh39n60b.pdf Size:152K _igbt

IXGH39N60B
IXGH39N60B

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

1.2. ixgh39n60bd1.pdf Size:152K _igbt

IXGH39N60B
IXGH39N60B

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

 5.1. ixgh34n60b2.pdf Size:40K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V IXGH 34N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat) < 1.55 V Optimized for 10-25 KHz hard tfi typ = 150 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 70 A TO

5.2. ixgh32n170 ixgt32n170.pdf Size:577K _ixys

IXGH39N60B
IXGH39N60B

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C75 A TO-247 AD (IXGH) IC90 TC = 90C32 A ICM TC = 25C, 1 ms

 5.3. ixgh32n90b2d1 ixgt32n90b2d1.pdf Size:219K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E

5.4. ixgh30n60b2d1 ixgt30n60b2d1.pdf Size:600K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 3

 5.5. ixgh32n90b2 ixgt32n90b2.pdf Size:202K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C (limited by leads) 64 A TO-26

5.6. ixgh35n120b ixgt35n120b.pdf Size:53K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 35N120B IC2 = 70 A VCE(sat) = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 MW 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25C70 A TO-247 AD (IXGH) IC90 TC = 90C35 A ICM TC = 25

5.7. ixgh30n60c2d1 ixgt30n60c2d1.pdf Size:164K _ixys

IXGH39N60B
IXGH39N60B

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C (limited by leads) 70 A IC110 TC = 110C

5.8. ixgh36n60b3c1.pdf Size:180K _ixys

IXGH39N60B
IXGH39N60B

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V C E VGES Continuous 20 V VGEM Transient

5.9. ixgh30n60b2 ixgt30n60b2.pdf Size:578K _ixys

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

5.10. ixgh32n170a ixgt32n170a.pdf Size:572K _ixys

IXGH39N60B
IXGH39N60B

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C32 A TO-247 AD (IXGH) IC90 TC = 90C21 A ICM TC = 25C, 1 ms 110 A SSOA VGE = 15

5.11. ixgh30n60c2 ixgt30n60c2.pdf Size:583K _ixys

IXGH39N60B
IXGH39N60B

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 70 A TO-247 (IXGH) IC110 TC = 110C30 A

5.12. ixgh32n170a.pdf Size:569K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C32 A TO-247 AD (IXGH) IC90 TC = 90°C21 A ICM TC = 25°C, 1 ms 110 A

5.13. ixgh30n120b3.pdf Size:209K _igbt

IXGH39N60B
IXGH39N60B

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 ≤ VCE(sat) ≤ ≤£ 3.5V ≤ ≤ IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Tra

5.14. ixgh36n60a3.pdf Size:220K _igbt

IXGH39N60B
IXGH39N60B

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGE

5.15. ixgh35n120b.pdf Size:52K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 35N120B IC2 = 70 A VCE(sat) = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G E VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V IC25 TC = 25°C70 A TO-247 AD (IXGH) IC90 TC = 90°C35 A I

5.16. ixgh30n60bu1.pdf Size:138K _igbt

IXGH39N60B
IXGH39N60B

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V IC25 TC = 25°C60 A C (TAB) IC110 TC = 110°C30 A G ICM

5.17. ixgh30n60c2.pdf Size:580K _igbt

IXGH39N60B
IXGH39N60B

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

5.18. ixgh30n60bd1.pdf Size:112K _igbt

IXGH39N60B
IXGH39N60B

IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V E VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC90 TC = 90°C30 A ICM TC = 25°C, 1

5.19. ixgh36n60b3.pdf Size:160K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C Tab E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 92 A

5.20. ixgh34n60b2.pdf Size:36K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V IXGH 34N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat) < 1.55 V Optimized for 10-25 KHz hard tfi typ = 150 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by lea

5.21. ixgh30n60c3d1.pdf Size:215K _igbt

IXGH39N60B
IXGH39N60B

GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 ≤ VCE(sat) ≤ 3.0V ≤ ≤ ≤ tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C (Tab) VGES Continuous ± 20 V VGEM Transient ± 30 V TO-247 (IXG

5.22. ixgh36n60b3d1.pdf Size:173K _igbt

IXGH39N60B
IXGH39N60B

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C (TAB) E VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 36 A G = Gate C = Col

5.23. ixgh32n90b2d1.pdf Size:217K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

5.24. ixgh31n60.pdf Size:54K _igbt

IXGH39N60B
IXGH39N60B

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 V IXGT 31N60 IC25 = 60 A VCE(sat) = 1.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-268 IC90 TC = 90°C31 A ICM TC = 25°C, 1 ms 80 A G SSOA VGE= 15 V, TVJ = 125°C, RG = 1

5.25. ixgh32n60a.pdf Size:125K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

5.26. ixgh32n90b2.pdf Size:199K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

5.27. ixgh30n60b.pdf Size:52K _igbt

IXGH39N60B
IXGH39N60B

IXGH30N60B VCES = 600 V HiPerFASTTM IGBT IXGT30N60B IC25 = 60 A VCE(sat) = 1.8 V tfi = 100 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC110 TC = 110°C30 A TO-268 (D3) ICM TC = 25°C, 1 ms 120 A (IXGT) SSOA

5.28. ixgh36n60a3d4.pdf Size:196K _igbt

IXGH39N60B
IXGH39N60B

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C (TAB) E IC1

5.29. ixgh32n100a3.pdf Size:120K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A ≤ VCE(sat) ≤ ≤ 2.2V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V C E VGES Continuous ± 20 V TO-268 (

5.30. ixgh35n120c.pdf Size:52K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Information IXGH 35N120C VCES = 1200 V IGBT IXGT 35N120C IC25 = 70 A VCE(sat) = 4.0 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G E VGES Continuous ±20 V (TAB) VGEM Transient ±30 V IC25 TC = 25°C70 A TO-247 AD (IXGH) IC90 TC = 90°C3

5.31. ixgh30n60b2d1.pdf Size:506K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Tr

5.32. ixgh32n60bu1.pdf Size:137K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C60 A E = Emitter, TAB = Collector IC90 TC = 90°C32 A IC

5.33. ixgh30n120c3h1.pdf Size:181K _igbt

IXGH39N60B
IXGH39N60B

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH30N120C3H1 IC100 = 24A ≤ ≤ VCE(sat) ≤ 4.2V ≤ ≤ High speed PT IGBTs for tfi(typ) = 42ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C 4

5.34. ixgh30n120b3d1.pdf Size:213K _igbt

IXGH39N60B
IXGH39N60B

VCES = 1200V GenX3TM 1200V IGBT IXGH30N120B3D1 IC110 = 30A IXGT30N120B3D1 ≤ VCE(sat) ≤ ≤£ 3.5V ≤ ≤ tfi(typ) = 204ns High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G IC110 TC = 110°C30

5.35. ixgh32n60c.pdf Size:81K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =

5.36. ixgh32n60bd1.pdf Size:125K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

5.37. ixgh30n60c3c1.pdf Size:278K _igbt

IXGH39N60B
IXGH39N60B

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RG

5.38. ixgh36n60b3c1.pdf Size:178K _igbt

IXGH39N60B
IXGH39N60B

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A ≤ Diode VCE(sat) ≤ 1.8V ≤ ≤ ≤ tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C E VGES Continuous ± 20

5.39. ixgh32n60cd1.pdf Size:160K _igbt

IXGH39N60B
IXGH39N60B

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D

5.40. ixgh32n170.pdf Size:573K _igbt

IXGH39N60B
IXGH39N60B

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC90 TC = 90°C32 A ICM TC

5.41. ixgh32n120a3.pdf Size:194K _igbt

IXGH39N60B
IXGH39N60B

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 ≤ VCE(sat) ≤ ≤ 2.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (Tab) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V IC25 TC = 25°C 75

5.42. ixgh30n60b4.pdf Size:81K _igbt

IXGH39N60B
IXGH39N60B

Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient ±30 V IC25 TC = 25°C 66 A G = Ga

5.43. ixgh36n60b3d4.pdf Size:200K _igbt

IXGH39N60B
IXGH39N60B

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G TAB C VGEM Transient ±30 V E IC110 TC = 110°C 36 A IF110 TC = 110°C 10 A

5.44. ixgh30n60c2d1.pdf Size:159K _igbt

IXGH39N60B
IXGH39N60B

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C (limited by leads) 70 A IC11

5.45. ixgh31n60d1.pdf Size:52K _igbt

IXGH39N60B
IXGH39N60B

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 V IGBT with Diode IXGT 31N60D1 IC25 = 60 A VCE(sat) = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C60 A (IXGH) IC90 TC = 90°C31 A ICM TC = 25°C, 1

5.46. ixgh30n60c3.pdf Size:269K _igbt

IXGH39N60B
IXGH39N60B

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 ≤ VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220AB (IXGP) VGES Continuous ± 20 V

5.47. ixgh30n60b2.pdf Size:576K _igbt

IXGH39N60B
IXGH39N60B

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) < 1.8 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

5.48. ixgh32n60b.pdf Size:34K _igbt

IXGH39N60B
IXGH39N60B

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C60 A E IC90 TC = 90°C32 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 120 A E = Emitter, TAB = Col

Datasheet: IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 , IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , GT15N101 , IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 , IXGH40N30 , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 .

 

 
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