All IGBT. IXGH40N30A Equivalents Search

 

IXGH40N30A Spec and Replacement


   Type Designator: IXGH40N30A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Package: TO247

 IXGH40N30A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH40N30A specs

 ..1. Size:92K  ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf pdf_icon

IXGH40N30A

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C... See More ⇒

 5.1. Size:92K  ixys
ixgh40n30.pdf pdf_icon

IXGH40N30A

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C... See More ⇒

 5.2. Size:80K  ixys
ixgh40n30bd1.pdf pdf_icon

IXGH40N30A

IXGH40N30BD1 VCES = 300 V HiPerFASTTM IGBT IC25 = 60 A VCE(sat) = 2.4 V tfi = 75 ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G C (TAB) VGEM Transient 30 V C E IC25 TC = 25 C60 A G = Gate, C = Collector, IC90 TC = 90 C40 A E = Emitter, TAB = Collector ICM TC = 25 C, 1 ms 160 ... See More ⇒

 7.1. Size:145K  ixys
ixgh40n60c2.pdf pdf_icon

IXGH40N30A

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1... See More ⇒

Specs: IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , IXGH40N30S , TGAN20N135FD , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 .

Keywords - IXGH40N30A transistor spec

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