All IGBT. IXGH40N30A Datasheet

 

IXGH40N30A IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH40N30A

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 300

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 120

Package: TO247

IXGH40N30A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH40N30A Datasheet (PDF)

1.1. ixgh40n30.pdf Size:92K _igbt

IXGH40N30A
IXGH40N30A

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V C (TAB) G VGES Continuous ±20 V E VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C 60 A IC90 TC = 90°C

3.1. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

IXGH40N30A
IXGH40N30A

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

3.2. ixgh40n60c2 ixgt40n60c2.pdf Size:149K _ixys

IXGH40N30A
IXGH40N30A

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C40 A I

 3.3. ixgh40n120c3d1.pdf Size:198K _ixys

IXGH40N30A
IXGH40N30A

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode ? ? VCE(sat) ? 4.4V ? ? tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G TAB C IC25 TC = 25C (

3.4. ixgh40n120c3.pdf Size:171K _ixys

IXGH40N30A
IXGH40N30A

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A ? VCE(sat) ? ? 4.4V ? ? High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V TO-247 (IXGH) VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads)

 3.5. ixgh40n60b2 ixgt40n60b2.pdf Size:578K _ixys

IXGH40N30A
IXGH40N30A

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

3.6. ixgh40n60b2d1 ixgt40n60b2d1.pdf Size:606K _ixys

IXGH40N30A
IXGH40N30A

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30

3.7. ixgh40n60c.pdf Size:122K _igbt

IXGH40N30A
IXGH40N30A

VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC110 TC = 11

3.8. ixgh40n60c2.pdf Size:145K _igbt

IXGH40N30A
IXGH40N30A

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 (IXGH) IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 1

3.9. ixgh40n120c3d1.pdf Size:196K _igbt

IXGH40N30A
IXGH40N30A

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode ≤ ≤ VCE(sat) ≤ 4.4V ≤ ≤ tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G TAB

3.10. ixgh40n60b2d1.pdf Size:513K _igbt

IXGH40N30A
IXGH40N30A

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Tra

3.11. ixgh40n120c3.pdf Size:169K _igbt

IXGH40N30A
IXGH40N30A

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A ≤ VCE(sat) ≤ ≤ 4.4V ≤ ≤ High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V TO-247 (IXGH) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°

3.12. ixgh40n120b2d1.pdf Size:213K _igbt

IXGH40N30A
IXGH40N30A

High Voltage IGBTs VCES = 1200V IXGH40N120B2D1 w/Diode IXGT40N120B2D1 IC110 = 40A ≤ VCE(sat) ≤ ≤ 3.5V ≤ ≤ tfi(typ) = 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V G C (TAB) C VGEM Transient ± 30 V E IC25 TC = 25°C (Limited by Lead) 75 A IC110 TC =

3.13. ixgh40n120a2.pdf Size:168K _igbt

IXGH40N30A
IXGH40N30A

IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) ≤ VCE(sat) ≤ 2.0 V ≤ ≤ ≤ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C IC25 TC = 25°C, IGBT chip capabilit

3.14. ixgh40n60b.pdf Size:291K _igbt

IXGH40N30A
IXGH40N30A

IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A IC110 TC = 110°C40 A TO-268 (D3) ICM TC = 25°C

3.15. ixgh40n60c2d1.pdf Size:168K _igbt

IXGH40N30A
IXGH40N30A

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

3.16. ixgh40n60a.pdf Size:52K _igbt

IXGH40N30A
IXGH40N30A

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

3.17. ixgh40n60.pdf Size:52K _igbt

IXGH40N30A
IXGH40N30A

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

3.18. ixgh40n60b2.pdf Size:575K _igbt

IXGH40N30A
IXGH40N30A

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

Datasheet: IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 , IXGH40N30 , FII50-12E , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 .

 

 
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