All IGBT. IXGH40N30B Datasheet

 

IXGH40N30B Datasheet and Replacement


   Type Designator: IXGH40N30B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXGH40N30B Datasheet (PDF)

 ..1. Size:92K  ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf pdf_icon

IXGH40N30B

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

 0.1. Size:80K  ixys
ixgh40n30bd1.pdf pdf_icon

IXGH40N30B

IXGH40N30BD1VCES = 300 VHiPerFASTTM IGBTIC25 = 60 AVCE(sat) = 2.4 Vtfi = 75 nsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25 C to 150 C 300 VVCGR TJ = 25 C to 150 C; RGE = 1 M 300 VVGES Continuous 20 VGC (TAB)VGEM Transient 30 VCEIC25 TC = 25 C60 AG = Gate, C = Collector,IC90 TC = 90 C40 AE = Emitter, TAB = CollectorICM TC = 25 C, 1 ms 160

 5.1. Size:92K  ixys
ixgh40n30.pdf pdf_icon

IXGH40N30B

VCES IC25 VCE(sat) tfiHiPerFASTTM IGBTIXGH 40N30/S 300 V 60 A 1.8 V 220nsIXGH 40N30A/S 300 V 60 A 2.1 V 120nsIXGH 40N30B/S 300 V 60 A 2.4 V 75 nsSymbol Test Conditions Maximum Ratings TO-247 SMD*VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C; RGE = 1 M 300 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VTO-247 ADIC25 TC = 25C 60 AIC90 TC = 90C

 7.1. Size:145K  ixys
ixgh40n60c2.pdf pdf_icon

IXGH40N30B

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

Datasheet: IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , IXGH40N30S , IXGH40N30A , CRG75T60AK3HD , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 .

History: FGW50N65WE | SGB02N120 | SGH30N60RUF | IHW40T120 | FID60-06D | CIF25P120P

Keywords - IXGH40N30B transistor datasheet

 IXGH40N30B cross reference
 IXGH40N30B equivalent finder
 IXGH40N30B lookup
 IXGH40N30B substitution
 IXGH40N30B replacement

 

 
Back to Top

 


 
.