HIA50N65T-SA PDF and Equivalents Search

 

HIA50N65T-SA PDF Specs and Replacement


   Type Designator: HIA50N65T-SA
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 272 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247
 

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HIA50N65T-SA PDF specs

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 hia50n65t-sa.pdf pdf_icon

HIA50N65T-SA

Mar 2023 HIA50N65T-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package & ... See More ⇒

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HIA50N65T-SA

Nov 2022 HIA50N65T-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package & ... See More ⇒

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 hia50n65h-ja.pdf pdf_icon

HIA50N65T-SA

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

 6.2. Size:472K  semihow
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HIA50N65T-SA

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

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Specs: HIHS50N65H-SA , HIA75N65H-SA , HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , SGH80N60UFD , HIA50N65H-SA , HIA50N65IH-JA , HIA20N140IH-DA , GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT .

History: 7MBR25VW120-50 | 7MBR35VB120-50 | 7MBR35UA120

Keywords - HIA50N65T-SA transistor spec

 HIA50N65T-SA cross reference
 HIA50N65T-SA equivalent finder
 HIA50N65T-SA lookup
 HIA50N65T-SA substitution
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