HIA50N65T-SA Datasheet. Specs and Replacement

Type Designator: HIA50N65T-SA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 272 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Package: TO247

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HIA50N65T-SA datasheet

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HIA50N65T-SA

Mar 2023 HIA50N65T-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package & ... See More ⇒

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HIA50N65T-SA

Nov 2022 HIA50N65T-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.50 V Soft Fast Reverse Recovery Diode Etot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package & ... See More ⇒

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HIA50N65T-SA

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

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HIA50N65T-SA

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

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Specs: HIHS50N65H-SA, HIA75N65H-SA, HIA30N65T-SA, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, MBQ50T65FDSC, HIA50N65H-SA, HIA50N65IH-JA, HIA20N140IH-DA, GT30F122, SG40T120DB, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT

Keywords - HIA50N65T-SA transistor spec

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