HIA50N65IH-JA Datasheet and Replacement
Type Designator: HIA50N65IH-JA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 272 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Qg ⓘ - Total Gate Charge, typ: 185 nC
Package: TO247
HIA50N65IH-JA substitution
HIA50N65IH-JA Datasheet (PDF)
hia50n65ih-ja.pdf

Nov 2022HIA50N65IH-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 2.00 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
hia50n65ih-sa.pdf

Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
hia50n65h-ja.pdf

Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
hia50n65t-ja.pdf

Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
Datasheet: HIA30N65T-SA , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , GT30F133 , HIA20N140IH-DA , GT30F122 , SG40T120DB , SG60T120UDB3 , SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF .
History: IQAB50N60D1 | STGP30H60DF | STGW30H60DFB | JT010N065SED | MPMC150B120RH | JT010N065FED
Keywords - HIA50N65IH-JA transistor datasheet
HIA50N65IH-JA cross reference
HIA50N65IH-JA equivalent finder
HIA50N65IH-JA lookup
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HIA50N65IH-JA replacement
History: IQAB50N60D1 | STGP30H60DF | STGW30H60DFB | JT010N065SED | MPMC150B120RH | JT010N065FED



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