HIA50N65IH-JA Datasheet and Replacement
Type Designator: HIA50N65IH-JA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 272 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Qgⓘ - Total Gate Charge, typ: 185 nC
Package: TO247
- IGBT Cross-Reference
HIA50N65IH-JA Datasheet (PDF)
hia50n65ih-ja.pdf

Nov 2022HIA50N65IH-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 2.00 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
hia50n65ih-sa.pdf

Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
hia50n65h-ja.pdf

Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
hia50n65t-ja.pdf

Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Keywords - HIA50N65IH-JA transistor datasheet
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