All IGBT. IXGH41N60 Datasheet

 

IXGH41N60 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH41N60

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 76A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 1.6

Package: TO247

IXGH41N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH41N60 Datasheet (PDF)

1.1. ixgh41n60.pdf Size:33K _igbt

IXGH41N60
IXGH41N60

Ultra-Low VCE(sat) IGBT IXGH 41N60 VCES = 600 V IC25 = 76 A VCE(sat) = 1.6 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C76 A IC90 TC = 90°C41 A ICM TC = 25°C, 1 ms 152 A G = Gate, C = Collector, E = Emitter, TAB = Collector SSOA VG

5.1. ixgh40n120c3d1.pdf Size:198K _ixys

IXGH41N60
IXGH41N60

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode ? ? VCE(sat) ? 4.4V ? ? tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V G TAB C IC25 TC = 25C (

5.2. ixgh40n60b2d1 ixgt40n60b2d1.pdf Size:606K _ixys

IXGH41N60
IXGH41N60

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30

 5.3. ixgh48n60c3c1.pdf Size:185K _ixys

IXGH41N60
IXGH41N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 2.5V ? ? ? tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G C VGES Continuous 20 V E ( TAB ) VGEM Transient 30 V G

5.4. ixgh40n60b2 ixgt40n60b2.pdf Size:578K _ixys

IXGH41N60
IXGH41N60

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

 5.5. ixgh40n60c2 ixgt40n60c2.pdf Size:149K _ixys

IXGH41N60
IXGH41N60

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C40 A I

5.6. ixgh48n60b3c1.pdf Size:187K _ixys

IXGH41N60
IXGH41N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V ( TAB ) C E VGES Continuous 20 V VGEM Transient

5.7. ixgh48n60a3d1.pdf Size:163K _ixys

IXGH41N60
IXGH41N60

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 with Diode IC110 = 48A ? VCE(sat) ? ? 1.35V ? ? Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C E IC110 TC = 110C 48 A ICM TC = 25C, 1ms 300 A SSOA VGE

5.8. ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf Size:162K _ixys

IXGH41N60
IXGH41N60

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

5.9. ixgh40n120c3.pdf Size:171K _ixys

IXGH41N60
IXGH41N60

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A ? VCE(sat) ? ? 4.4V ? ? High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V TO-247 (IXGH) VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads)

5.10. ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Size:223K _ixys

IXGH41N60
IXGH41N60

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 ? VCE(sat) ? ? 2.5V ? ? High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25C to 150C 600 V E (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C ( Limi

5.11. ixgh40n120c3d1.pdf Size:196K _igbt

IXGH41N60
IXGH41N60

Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode ≤ ≤ VCE(sat) ≤ 4.4V ≤ ≤ tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G TAB

5.12. ixgh48n60c3c1.pdf Size:183K _igbt

IXGH41N60
IXGH41N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V E ( TAB ) VGEM

5.13. ixgh48n60b3.pdf Size:221K _igbt

IXGH41N60
IXGH41N60

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

5.14. ixgh48n60b3c1.pdf Size:185K _igbt

IXGH41N60
IXGH41N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 1.8V ≤ ≤ ≤ tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V ( TAB ) C E VGES Continuous ± 20

5.15. ixgh4n250c.pdf Size:156K _igbt

IXGH41N60
IXGH41N60

Advance Technical Information High Voltage VCES = 2500V IXGT4N250C IGBTs IXGH4N250C IC110 = 4A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V TO-247 (IXGH) VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 13 A IC110 TC = 110°C 4 A

5.16. ixgh48n60a3d1.pdf Size:201K _igbt

IXGH41N60
IXGH41N60

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 w/Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ± 20 V VGEM Transient ± 30 V G = Gate C = Collector E = Emitter Tab = Colle

5.17. ixgh40n60b2.pdf Size:575K _igbt

IXGH41N60
IXGH41N60

Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transi

5.18. ixgh48n60c3d1.pdf Size:201K _igbt

IXGH41N60
IXGH41N60

VCES = 600V IXGH48N60C3D1 GenX3TM 600V IGBT IC110 = 48A with Diode ≤ VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C E VGEM Transient ±30 V ( TAB ) IC25 TC = 25°C (Limited by Leads)

5.19. ixgh40n60a.pdf Size:52K _igbt

IXGH41N60
IXGH41N60

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

5.20. ixgh42n30c3.pdf Size:173K _igbt

IXGH41N60
IXGH41N60

VCES = 300V IXGA42N30C3 GenX3TM 300V IGBT IC110 = 42A IXGH42N30C3 ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ High Speed PT IGBTs for IXGP42N30C3 50-150kHz switching tfi typ = 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V E C (TAB) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V

5.21. ixgh40n60.pdf Size:52K _igbt

IXGH41N60
IXGH41N60

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C40 A TO-204 AE (IXGM) I

5.22. ixgh40n60b.pdf Size:291K _igbt

IXGH41N60
IXGH41N60

IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A IC110 TC = 110°C40 A TO-268 (D3) ICM TC = 25°C

5.23. ixgh40n120c3.pdf Size:169K _igbt

IXGH41N60
IXGH41N60

Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A ≤ VCE(sat) ≤ ≤ 4.4V ≤ ≤ High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V TO-247 (IXGH) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°

5.24. ixgh40n60b2d1.pdf Size:513K _igbt

IXGH41N60
IXGH41N60

VCES = 600 V HiPerFASTTM IGBT IXGH 40N60B2D1 IC25 = 75 A IXGT 40N60B2D1 VCE(sat) < 1.7 V Optimized for 10-25 KHz hard tfi typ = 82 ns switching and up to 150 KHz resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Tra

5.25. ixgh40n30.pdf Size:92K _igbt

IXGH41N60
IXGH41N60

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V C (TAB) G VGES Continuous ±20 V E VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C 60 A IC90 TC = 90°C

5.26. ixgh40n60c2d1.pdf Size:168K _igbt

IXGH41N60
IXGH41N60

HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 ≤ ≤ VCE(SAT) ≤ 2.7V ≤ ≤ IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V

5.27. ixgh45n120.pdf Size:62K _igbt

IXGH41N60
IXGH41N60

IXGH 45N120 VCES = 1200 V IXGT 45N120 IC25 = 75 A IGBT VCE(sat) = 2.5 V High Voltage, Low VCE(sat) tfi(typ) = 390 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A TO-247 AD (I

5.28. ixgh40n120b2d1.pdf Size:213K _igbt

IXGH41N60
IXGH41N60

High Voltage IGBTs VCES = 1200V IXGH40N120B2D1 w/Diode IXGT40N120B2D1 IC110 = 40A ≤ VCE(sat) ≤ ≤ 3.5V ≤ ≤ tfi(typ) = 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V G C (TAB) C VGEM Transient ± 30 V E IC25 TC = 25°C (Limited by Lead) 75 A IC110 TC =

5.29. ixgh48n60b3d1.pdf Size:200K _igbt

IXGH41N60
IXGH41N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH48N60B3D1 with Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G ( TAB ) C E I

5.30. ixgh40n120a2.pdf Size:168K _igbt

IXGH41N60
IXGH41N60

IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) ≤ VCE(sat) ≤ 2.0 V ≤ ≤ ≤ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C IC25 TC = 25°C, IGBT chip capabilit

5.31. ixgh48n60c3.pdf Size:240K _igbt

IXGH41N60
IXGH41N60

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

5.32. ixgh40n60c2.pdf Size:145K _igbt

IXGH41N60
IXGH41N60

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 (IXGH) IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 1

5.33. ixgh48n60a3.pdf Size:234K _igbt

IXGH41N60
IXGH41N60

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

5.34. ixgh40n60c.pdf Size:122K _igbt

IXGH41N60
IXGH41N60

VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC110 TC = 11

Datasheet: IXGH39N60B , IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 , IXGH40N30 , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IRGBC20S , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 .

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