All IGBT. OST15N65PRF Datasheet

 

OST15N65PRF Datasheet and Replacement


   Type Designator: OST15N65PRF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Qgⓘ - Total Gate Charge, typ: 73 nC
   Package: TO220
      - IGBT Cross-Reference

 

OST15N65PRF Datasheet (PDF)

 ..1. Size:777K  oriental semi
 ost15n65prf.pdf pdf_icon

OST15N65PRF

OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:718K  oriental semi
 ost15n65krf.pdf pdf_icon

OST15N65PRF

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:768K  oriental semi
 ost15n65drf.pdf pdf_icon

OST15N65PRF

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:735K  oriental semi
 ost15n65frf.pdf pdf_icon

OST15N65PRF

OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

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History: CRG25T120BK3S

Keywords - OST15N65PRF transistor datasheet

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