All IGBT. OST40N65HEMF Datasheet

 

OST40N65HEMF Datasheet and Replacement


   Type Designator: OST40N65HEMF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 68 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qg ⓘ - Total Gate Charge, typ: 81 nC
   Package: TO247
 

 OST40N65HEMF substitution

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OST40N65HEMF Datasheet (PDF)

 ..1. Size:770K  oriental semi
 ost40n65hemf.pdf pdf_icon

OST40N65HEMF

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N65HEMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N65HEMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:717K  oriental semi
 ost40n65kmf.pdf pdf_icon

OST40N65HEMF

OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

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Datasheet: OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , IKW40T120 , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D .

History: IHW40N65R5 | MG200Q2YS40 | IXSH30N60U1 | 2MBI300LB-060 | YGW25N120F1A1 | AUIRGB4062D1

Keywords - OST40N65HEMF transistor datasheet

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