OST50N65HEWF Datasheet and Replacement
Type Designator: OST50N65HEWF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 375
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 80
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.6
V @25℃
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 80
nS
Coesⓘ - Output Capacitance, typ: 273
pF
Package:
TO247
- IGBT Cross-Reference
OST50N65HEWF Datasheet (PDF)
5.1. Size:732K oriental semi
ost50n65hmf.pdf 
OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.2. Size:535K oriental semi
ost50n65hf-d.pdf
OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:747K oriental semi
ost50n65hszf.pdf
OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:765K oriental semi
ost50n65hm2f.pdf
OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:752K oriental semi
ost50n65hsnf.pdf
OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:617K oriental semi
ost50n65hzf.pdf
OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.8. Size:698K oriental semi
ost50n65hf.pdf
OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology
5.9. Size:745K oriental semi
ost50n65hxf.pdf
OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Datasheet: AP05G120SW-HF
, TSG10N120CN
, AP05G120NSW-HF
, AP20GT60SW
, AP20GT60W
, CI15T60
, MMIX4B12N300
, NGD8205A
, IHW20N135R5
, IXYP8N90C3D1
, APT20GN60BG
, APT20GN60KG
, APT20GN60SG
, AOK20B60D1
, F3L30R06W1E3_B11
, WGW15G120N
, WGW15G120W
.
History: MMG75J120U6HN
| 2SH29
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