OST60N65H4EMF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

OST60N65H4EMF Specs and Replacement

Type Designator: OST60N65H4EMF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 71 nS

Coesⓘ - Output Capacitance, typ: 177 pF

Package: TO247-4

OST60N65H4EMF Substitution

- IGBTⓘ Cross-Reference Search

OST60N65H4EMF datasheet

..1. Size:817K oriental semi
ost60n65h4emf.pdf pdf_icon

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3.1. Size:789K oriental semi
ost60n65h4ewf.pdf pdf_icon

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5.1. Size:733K oriental semi
ost60n65hxf.pdf pdf_icon

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog... See More ⇒

5.2. Size:606K oriental semi
ost60n65hsmf.pdf pdf_icon

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol... See More ⇒