All IGBT. OST60N65H4EMF Datasheet

 

OST60N65H4EMF Datasheet and Replacement


   Type Designator: OST60N65H4EMF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 71 nS
   Coesⓘ - Output Capacitance, typ: 177 pF
   Package: TO247-4
 

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OST60N65H4EMF Datasheet (PDF)

 ..1. Size:817K  oriental semi
ost60n65h4emf.pdf pdf_icon

OST60N65H4EMF

 3.1. Size:789K  oriental semi
ost60n65h4ewf.pdf pdf_icon

OST60N65H4EMF

 5.1. Size:733K  oriental semi
ost60n65hxf.pdf pdf_icon

OST60N65H4EMF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:606K  oriental semi
ost60n65hsmf.pdf pdf_icon

OST60N65H4EMF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , OST50N65HXF , OST50N65HZF , RGT50TS65D , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF , OST75N120HM2F , OST75N65HEM2F .

History: FF225R17ME3

Keywords - OST60N65H4EMF transistor datasheet

 OST60N65H4EMF cross reference
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 OST60N65H4EMF replacement

 

 
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