OST75N65HEM2F Datasheet and Replacement
Type Designator: OST75N65HEM2F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 375
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 90
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 75
nS
Coesⓘ - Output Capacitance, typ: 173
pF
Qgⓘ -
Total Gate Charge, typ: 125
nC
Package:
TO247
- IGBT Cross-Reference
OST75N65HEM2F Datasheet (PDF)
..1. Size:608K oriental semi
ost75n65hem2f.pdf 
OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
3.1. Size:788K oriental semi
ost75n65hemf.pdf
OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.1. Size:741K oriental semi
ost75n65hnf.pdf
OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.3. Size:741K oriental semi
ost75n65htnf.pdf
OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:768K oriental semi
ost75n65hsxf.pdf
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:805K oriental semi
ost75n65hm2f.pdf
OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:747K oriental semi
ost75n65hsvf.pdf
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:751K oriental semi
ost75n65hszf.pdf
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.8. Size:822K oriental semi
ost75n65hzf.pdf
OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.9. Size:801K oriental semi
ost75n65hsnf.pdf
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.10. Size:768K oriental semi
ost75n65hmf.pdf
OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.11. Size:772K oriental semi
ost75n65hsmf.pdf
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.12. Size:777K oriental semi
ost75n65hlmf.pdf
OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Datasheet: OST60N65H4EMF
, OST60N65HEMF
, OST60N65HMF
, OST60N65HSMF
, OST60N65HSXF
, OST60N65HSZF
, OST60N65HXF
, OST75N120HM2F
, FGPF4533
, OST75N65HEMF
, OST75N65HLMF
, OST75N65HM2F
, OST75N65HMF
, OST75N65HNF
, OST75N65HSMF
, OST75N65HSNF
, OST75N65HSVF
.
History: AOTF15B65MQ1
Keywords - OST75N65HEM2F transistor datasheet
OST75N65HEM2F cross reference
OST75N65HEM2F equivalent finder
OST75N65HEM2F lookup
OST75N65HEM2F substitution
OST75N65HEM2F replacement
