All IGBT. OST90N65HM2F Datasheet

 

OST90N65HM2F Datasheet and Replacement


   Type Designator: OST90N65HM2F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 164 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247
      - IGBT Cross-Reference

 

OST90N65HM2F Datasheet (PDF)

 ..1. Size:785K  oriental semi
 ost90n65hm2f.pdf pdf_icon

OST90N65HM2F

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 7.1. Size:481K  oriental semi
 ost90n60hczf.pdf pdf_icon

OST90N65HM2F

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IRGC16B60KB

Keywords - OST90N65HM2F transistor datasheet

 OST90N65HM2F cross reference
 OST90N65HM2F equivalent finder
 OST90N65HM2F lookup
 OST90N65HM2F substitution
 OST90N65HM2F replacement

 

 
Back to Top

 


 
.