All IGBT. SGT10T60SD1S Datasheet

 

SGT10T60SD1S Datasheet and Replacement


   Type Designator: SGT10T60SD1S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 10T60SD1S
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 88 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Qg ⓘ - Total Gate Charge, typ: 27 nC
   Package: TO263
 

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SGT10T60SD1S Datasheet (PDF)

 ..1. Size:328K  silan
 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT10T60SD1S

SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A

 4.1. Size:315K  silan
 sgt10t60sdm1p7.pdf pdf_icon

SGT10T60SD1S

SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I

 4.2. Size:316K  silan
 sgt10t60sdm1d.pdf pdf_icon

SGT10T60SD1S

SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1

 9.1. Size:561K  silan
 sgt10u60sdm2d.pdf pdf_icon

SGT10T60SD1S

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - SGT10T60SD1S transistor datasheet

 SGT10T60SD1S cross reference
 SGT10T60SD1S equivalent finder
 SGT10T60SD1S lookup
 SGT10T60SD1S substitution
 SGT10T60SD1S replacement

 

 
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