SGT10T60SD1S IGBT. Datasheet pdf. Equivalent
Type Designator: SGT10T60SD1S
Type: IGBT + Anti-Parallel Diode
Marking Code: 10T60SD1S
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 88
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 28
Collector Capacity (Cc), typ, pF: 35
Total Gate Charge (Qg), typ, nC: 27
Package: TO263
SGT10T60SD1S Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT10T60SD1S Datasheet (PDF)
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Datasheet: GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , MBQ50T65FDSC , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD .
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