SGT10T60SD1S Datasheet. Specs and Replacement

Type Designator: SGT10T60SD1S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 88 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 35 pF

Package: TO263

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SGT10T60SD1S datasheet

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SGT10T60SD1S

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SGT10T60SD1S

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SGT10T60SD1S

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒

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Specs: GT30J127, OST50N65HEWF, OST50N65KEW2F, OST60N65H4EMF, OST60N65H4EWF, OST75N65HSWF, OST80N65H4EWF, OST80N65HEWF, RJP30H1DPD, SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD

Keywords - SGT10T60SD1S transistor spec

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