SGT10T60SD1S PDF and Equivalents Search

 

SGT10T60SD1S Specs and Replacement

Type Designator: SGT10T60SD1S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 88 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 35 pF

Package: TO263

 SGT10T60SD1S Substitution

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SGT10T60SD1S datasheet

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 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT10T60SD1S

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SGT10T60SD1S

SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒

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SGT10T60SD1S

SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1... See More ⇒

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 sgt10u60sdm2d.pdf pdf_icon

SGT10T60SD1S

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒

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Specs: GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , RJP63F3DPP-M0 , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD .

Keywords - SGT10T60SD1S transistor spec

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