All IGBT. SGT10T60SD1S Datasheet

 

SGT10T60SD1S Datasheet and Replacement


   Type Designator: SGT10T60SD1S
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 88 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Package: TO263
 

 SGT10T60SD1S substitution

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SGT10T60SD1S Datasheet (PDF)

 ..1. Size:328K  silan
 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT10T60SD1S

SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A

 4.1. Size:315K  silan
 sgt10t60sdm1p7.pdf pdf_icon

SGT10T60SD1S

SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I

 4.2. Size:316K  silan
 sgt10t60sdm1d.pdf pdf_icon

SGT10T60SD1S

SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1

 9.1. Size:561K  silan
 sgt10u60sdm2d.pdf pdf_icon

SGT10T60SD1S

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A

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Datasheet: GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , FGA60N65SMD , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD .

Keywords - SGT10T60SD1S transistor datasheet

 SGT10T60SD1S cross reference
 SGT10T60SD1S equivalent finder
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