SGT10T60SD1F IGBT. Datasheet pdf. Equivalent
Type Designator: SGT10T60SD1F
Type: IGBT + Anti-Parallel Diode
Marking Code: 10T60SD1F
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 27
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 28
Collector Capacity (Cc), typ, pF: 35
Total Gate Charge (Qg), typ, nC: 27
Package: TO220F
SGT10T60SD1F Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT10T60SD1F Datasheet (PDF)
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