All IGBT. IXGK50N60B Datasheet

 

IXGK50N60B IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGK50N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 310 pF
   Package: TO264

 IXGK50N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGK50N60B Datasheet (PDF)

 ..1. Size:181K  ixys
 ixgk50n60b ixgt50n60b ixgj50n60b.pdf

IXGK50N60B IXGK50N60B

IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le

 ..2. Size:181K  ixys
 ixgk50n60b.pdf

IXGK50N60B IXGK50N60B

IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le

 0.1. Size:494K  ixys
 ixgk50n60b2d1.pdf

IXGK50N60B IXGK50N60B

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 0.2. Size:627K  ixys
 ixgk50n60b2d1 ixgx50n60b2d1.pdf

IXGK50N60B IXGK50N60B

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 0.3. Size:88K  ixys
 ixgk50n60bd1.pdf

IXGK50N60B IXGK50N60B

IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m

 0.4. Size:167K  ixys
 ixgk50n50bu1 ixgk50n60bu1.pdf

IXGK50N60B IXGK50N60B

VCES IC25 VCE(sat) tfiHiPerFASTTMIXGK 50N50BU1500 V 75 A 2.3 V 100nsIGBT with Diode600 V 75 A 2.5 V 120nsIXGK 50N60BU1Combi PackPreliminary dataSymbol Test Conditions Maximum Ratings TO-264 AA50N50 50N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VGVGES Continuous 20 20 VCEVGEM Transient 30 30 VIC25 TC = 25 C75 75 AG = Ga

Datasheet: IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , STGW60V60DF , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 .

 

 
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