SGT20T135QR1P7 PDF and Equivalents Search

 

SGT20T135QR1P7 Specs and Replacement

Type Designator: SGT20T135QR1P7

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 55 pF

Package: TO247

 SGT20T135QR1P7 Substitution

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SGT20T135QR1P7 datasheet

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 sgt20t135qr1p7 sgt20t135qr1pn sgt20t135qr1pt.pdf pdf_icon

SGT20T135QR1P7

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SGT20T135QR1P7

SGT20T60SD1F(S)(P7)(FD)(PN) 20A 600V C 2 1 SGT20T60SD1F(S)(P7)(FD)(PN)(T) G Field Stop III 1 UPS SMPS PFC 3 2 3 TO-3P E 1 3 ... See More ⇒

 8.2. Size:519K  silan
 sgt20t60sdm1p7.pdf pdf_icon

SGT20T135QR1P7

SGT20T60SDM1P7 20 600V C 2 SGT20T60SDM1P7 Field Stop 1 G UPS SMPS PFC 3 E 20A 600V VCE(sat)( )=1.7V@IC=20A ... See More ⇒

Specs: SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, GT30G124, SGT20T135QR1PN, SGT20T135QR1PT, SGT20T60SD1F, SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T

Keywords - SGT20T135QR1P7 transistor spec

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