SGT20T60SD1P7 Datasheet and Replacement
Type Designator: SGT20T60SD1P7
Type: IGBT + Anti-Parallel Diode
Marking Code: 20T60SD1P7
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 139 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qgⓘ - Total Gate Charge, typ: 52 nC
Package: TO247
- IGBT Cross-Reference
SGT20T60SD1P7 Datasheet (PDF)
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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: FD200R12PT4_B6
Keywords - SGT20T60SD1P7 transistor datasheet
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History: FD200R12PT4_B6
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