SGT20T60SD1P7 Specs and Replacement
Type Designator: SGT20T60SD1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 139 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO247
SGT20T60SD1P7 Substitution - IGBTⓘ Cross-Reference Search
SGT20T60SD1P7 datasheet
sgt20t60sd1f sgt20t60sd1s sgt20t60sd1str sgt20t60sd1p7 sgt20t60sd1fd sgt20t60sd1pn sgt20t60sd1t.pdf
SGT20T60SD1F(S)(P7)(FD)(PN) 20A 600V C 2 1 SGT20T60SD1F(S)(P7)(FD)(PN)(T) G Field Stop III 1 UPS SMPS PFC 3 2 3 TO-3P E 1 3 ... See More ⇒
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20 600V C 2 SGT20T60SDM1P7 Field Stop 1 G UPS SMPS PFC 3 E 20A 600V VCE(sat)( )=1.7V@IC=20A ... See More ⇒
Specs: SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, SGT20T135QR1P7, SGT20T135QR1PN, SGT20T135QR1PT, SGT20T60SD1F, SGT20T60SD1S, IKW50N60T, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, SGT40N60FD2PT
Keywords - SGT20T60SD1P7 transistor spec
SGT20T60SD1P7 cross reference
SGT20T60SD1P7 equivalent finder
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