SGT40N60F2P7 Specs and Replacement
Type Designator: SGT40N60F2P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 88 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO247
SGT40N60F2P7 Substitution - IGBTⓘ Cross-Reference Search
SGT40N60F2P7 datasheet
sgt40n60f2p7.pdf
SGT40N60F2P7 40A, 600V C 2 SGT40N60F2P7 1 Field Stop II G UPS SMPS PFC 3 E 4... See More ⇒
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SGT40N60FD2PN(P7)(PT) 40A, 600V C 2 SGT40N60FD2PN(P7)(PT) 1 1 2 G 3 Field Stop III TO-247-3L SMPS UPS ... See More ⇒
sgt40n60fd2pn sgt40n60fd2p7.pdf
SGT40N60FD2PN(P7) 40A, 600V SGT40N60FD2PN(P7) Field Stop III UPS SMPS PFC 40A, 600V, VCE(sat) =1.... See More ⇒
Specs: SGT20T60SD1F, SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, CRG15T120BNR3S, SGT40N60FD1P7, SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7
Keywords - SGT40N60F2P7 transistor spec
SGT40N60F2P7 cross reference
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