SGT40N60FD1P7 Specs and Replacement
Type Designator: SGT40N60FD1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 88 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO247
SGT40N60FD1P7 Substitution - IGBT ⓘ Cross-Reference Search
SGT40N60FD1P7 datasheet
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Specs: SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, SGT40N60F2P7, SGH80N60UFD, SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7
Keywords - SGT40N60FD1P7 transistor spec
SGT40N60FD1P7 cross reference
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