SGT60N60FD1PT Specs and Replacement
Type Designator: SGT60N60FD1PT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 142 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Package: TO3PN
SGT60N60FD1PT Substitution - IGBTⓘ Cross-Reference Search
SGT60N60FD1PT datasheet
sgt60n60fd1pn sgt60n60fd1p7 sgt60n60fd1ps sgt60n60fd1pt.pdf
SGT60N60FD1PN/P7/PS/PT 60A 600V C 2 1 SGT60N60FD1PN/P7/PS/PT Field G Stop UPS 3 SMPS PFC E 1 2 1 3 60A 600V VCE(sat)( )=2.2V@IC=60A ... See More ⇒
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A ... See More ⇒
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A ... See More ⇒
sgt60u65fd1pn sgt60u65fd1pt.pdf
Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin... See More ⇒
Specs: SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, IKW50N60H3, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4, SGT75T65SDM1P7, SGTP30V60FD2PU, SGTP40V120F2P7, SGTP40V120FDB2P7
Keywords - SGT60N60FD1PT transistor spec
SGT60N60FD1PT cross reference
SGT60N60FD1PT equivalent finder
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SGT60N60FD1PT replacement
History: SGT40N60FD1P7
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