SGT60U65FD1P7 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT60U65FD1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 60U65FD1
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 160 nS
   Coesⓘ - Output Capacitance, typ: 132 pF
   Qgⓘ - Total Gate Charge, typ: 210 nC
   Package: TO247

SGT60U65FD1P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGT60U65FD1P7 Datasheet (PDF)

..1. Size:319K silan
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf

SGT60U65FD1PN(PT)(P7) 60A650V C 2SGT60U65FD1PN(PT)(P7)1G 4 PlusField Stop IV+ UPSSMPS PFC 3 E 60A650VVCE(sat)( )=2.0V@IC=60A

2.1. Size:281K 1
sgt60u65fd1pn sgt60u65fd1pt.pdf

SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin

9.1. Size:558K 1
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf