SGTP50V65UFCR3P7 Specs and Replacement
Type Designator: SGTP50V65UFCR3P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 273 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 64 nS
Coesⓘ - Output Capacitance, typ: 282 pF
Package: TO247
SGTP50V65UFCR3P7 Substitution - IGBT ⓘ Cross-Reference Search
SGTP50V65UFCR3P7 datasheet
sgtp50v65ufcr3p7.pdf
SGTP50V65UFCR3P7 50A 650V C 2 SGTP50V65UFCR3P7 1 G Field Stop 5 OBC PFC 3 E 50A 650V VCE(sat)( )=1.60V@IC=5... See More ⇒
sgtp50v65uf1p7.pdf
SGTP50V65UF1P7 50A 650V C 2 SGTP50V65UF1P7 1 G Field Stop 5 UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.60V@IC=50A ... See More ⇒
Specs: SGTP50T120FDB4PWA , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , GT30G122 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 .
Keywords - SGTP50V65UFCR3P7 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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