SGTP50V65UFCR3P7 Datasheet and Replacement
Type Designator: SGTP50V65UFCR3P7
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 273 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 64 nS
Coesⓘ - Output Capacitance, typ: 282 pF
Package: TO247
- IGBT Cross-Reference
SGTP50V65UFCR3P7 Datasheet (PDF)
sgtp50v65ufcr3p7.pdf

SGTP50V65UFCR3P7 50A650V C 2SGTP50V65UFCR3P7 1GField Stop 5OBC PFC 3E 50A650VVCE(sat)( )=1.60V@IC=5
sgtp50v65uf1p7.pdf

SGTP50V65UF1P7 50A650V C 2SGTP50V65UF1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.60V@IC=50A
sgtp50v65sdb1p7.pdf

SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A
sgtp50v65fdb1p7.pdf

SGTP50V65FDB1P7 50A650V C 2SGTP50V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A
Datasheet: SGTP50T120FDB4PWA , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , IRGB20B60PD1 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 .
History: NGTB15N120IHRWG | IXST35N120B | 20MT120UFP | MSG100D350FHS | F3L300R12ME4_B23 | MSG20T65HPT1 | MSG40T120FQC
Keywords - SGTP50V65UFCR3P7 transistor datasheet
SGTP50V65UFCR3P7 cross reference
SGTP50V65UFCR3P7 equivalent finder
SGTP50V65UFCR3P7 lookup
SGTP50V65UFCR3P7 substitution
SGTP50V65UFCR3P7 replacement
History: NGTB15N120IHRWG | IXST35N120B | 20MT120UFP | MSG100D350FHS | F3L300R12ME4_B23 | MSG20T65HPT1 | MSG40T120FQC



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