All IGBT. SL15T65F Datasheet

 

SL15T65F Datasheet and Replacement


   Type Designator: SL15T65F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 182 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 57 pF
   Qgⓘ - Total Gate Charge, typ: 61 nC
   Package: TO220
      - IGBT Cross-Reference

 

SL15T65F Datasheet (PDF)

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SL15T65F

SL15T65Feature High ruggedness for motor control VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode Low EMI Maximum junction temperature 175CApplications Inverter for motor controlMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 650 VCETc=25 30 VDC collector current, limited by T Ivjma

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG200D060B6N

Keywords - SL15T65F transistor datasheet

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