All IGBT. SL20T65FL Datasheet

 

SL20T65FL Datasheet and Replacement


   Type Designator: SL20T65FL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 162 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 128 pF
   Qg ⓘ - Total Gate Charge, typ: 43.9 nC
   Package: TO247
 

 SL20T65FL substitution

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SL20T65FL Datasheet (PDF)

 ..1. Size:8544K  slkor
 sl20t65f sl20t65 sl20t65fz sl20t65fl.pdf pdf_icon

SL20T65FL

SL20T65 SeriesFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)typ =1.6V,IC=20A and TC =25C RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25SL20T65/Parameter Symbol SL20T65F SL20T65FLUnitSL20N65FZCollector-Emmiter Voltage Vces 650 V40 AIc T=25Collector Current-continuou

 0.1. Size:6757K  slkor
 sl20t65fl1 sl20t65k1 sl20t65f1.pdf pdf_icon

SL20T65FL

SL20T65F1/K1/FL1IGBTFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)typ =1.6V,IC=20A and TC =25C RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Typ UnitCollector-Emmiter Voltage Vces 650 V40 AIc T=25Collector Current-continuousT=10020 ACollector Cu

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Keywords - SL20T65FL transistor datasheet

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