2SH27 Datasheet and Replacement
Type Designator: 2SH27
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: TO220AB
- IGBT Cross-Reference
2SH27 Datasheet (PDF)
2sh27.pdf

2SH27Silicon N Channel IGBTHigh Speed Power SwitchingADE-208-789A(Z)2nd. EditionMay 1999Features High speed switching Low on-voltageOutlineTO220ABCG121. GateE32. Collector (Flange)3. Emitter2SH27Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to Emitter voltage VCES 600 VGate to Emitter voltage VGES 20 VColle
Datasheet: 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , IRG4PC50UD , 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - 2SH27 transistor datasheet
2SH27 cross reference
2SH27 equivalent finder
2SH27 lookup
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2SH27 replacement
History: MG25Q6ES51 | 7MBR75U2B060



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