2SH27 Specs and Replacement
Type Designator: 2SH27
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO220AB
2SH27 Substitution - IGBTⓘ Cross-Reference Search
2SH27 datasheet
2sh27.pdf
2SH27 Silicon N Channel IGBT High Speed Power Switching ADE-208-789A(Z) 2nd. Edition May 1999 Features High speed switching Low on-voltage Outline TO 220AB C G 1 2 1. Gate E 3 2. Collector (Flange) 3. Emitter 2SH27 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 600 V Gate to Emitter voltage VGES 20 V Colle... See More ⇒
Specs: 2SH16, 2SH17, 2SH18, 2SH19, 2SH20, 2SH21, 2SH22, 2SH26, IRG4PC50UD, 2SH28, 2SH29, 2SH30, 2SH31, HCKZ75N65BH2, IGC07T120T8L, IGC07T120T6L, APT100GF60LR
Keywords - 2SH27 transistor spec
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History: 2SH22
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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