All IGBT. SIF30N60G21B Datasheet

 

SIF30N60G21B IGBT. Datasheet pdf. Equivalent


   Type Designator: SIF30N60G21B
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 31
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 41
   Collector Capacity (Cc), typ, pF: 82
   Package: TO220F

 SIF30N60G21B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIF30N60G21B Datasheet (PDF)

 ..1. Size:1095K  cn super semi
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf

SIF30N60G21B
SIF30N60G21B

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

 7.1. Size:1094K  cn super semi
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf

SIF30N60G21B
SIF30N60G21B

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

Datasheet: SL20T65 , SL20T65FZ , SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , GT30J124 , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 .

 

 
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